HomeNews1.7kV and 1.2kV silicon carbide power diodes

1.7kV and 1.2kV silicon carbide power diodes

UnitedSiC-SiC-diode-TO-247-2L

The UJ3D 1,200V and 1,700V devices are part of the company’s 3rd generation of ‘merged-PiN-Schottky’ (MPS) diodes.

The Vf x Qc figure-of-merit is emphasised by the company. Picking one of the four at random, this typically is 1.4V x 51nC (25°C, 10A, 800V) for the 1.2kV 10A UJ3D1210K2. Typical forward voltage rises to 1.85V ar 150°C.

The other parts are:


The package for all parts is TO-247-2L. “Having a >8.8mm clearance between the anode and the cathode means they are better at coping with high pollution environments where voltage transients are likely to be present,” according to the company.

Non-repetitive max surge current id 110A (110°C, 10ms half sine) in the UJ3D1210K2. ” In high current situations, the novel PN junction arrangement enables the injection of additional charge carriers,” said the company. “Thanks to this, the diodes can withstand up to 12x the rated current.”

All are compliant with the AEC-Q101 automotive standard adn are alos available in die form.

Applications are expected in fast-charge electric vehicle access points, industrial motor drives and solar energy inverters.

The UJ3D1210K2 product page is here